| PART |
Description |
Maker |
| STN1NK60Z 9700 |
N-CHANNEL 600V - 13OHM - 0.25A - SOT-223 ZENER-PROTECTED SUPERMESH POWER MOSFET
From old datasheet system
|
STMicroelectronics
|
| FCB36N60N FCB36N60NTM |
N-Channel SupreMOSMOSFET 600V, 25A, 125m
N-Channel SupreMOS? MOSFET 600 V, 36 A, 90 mΩ
|
Fairchild Semiconductor
|
| ENA0869 |
N-Channel Power MOSFET, 1500V, 2A, 13Ohm, TO-263-2L
|
ON Semiconductor
|
| 25FR120 25FR120M A25FR120 A25FR120M 25FR100 25FR10 |
100V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
From old datasheet system
800V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
STANDARDRECOVERYDIODES
400V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
600V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1000V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
1200V 25A Std. Recovery Diode in a DO-203AA (DO-4)package
标准恢复二极
STANDARD RECOVERY DIODES
|
IRF[International Rectifier]
InternationalRectifier
|
| 20CTQ150TRRPBF 20CTQ150 20CTQ150-1 20CTQ150-1PBF 2 |
SCHOTTKYRECTIFIER
SSR IO 230V 25A 4.5-32 VDC LED
SSR ZS 600V 25A 4.5-32 VDC LED RoHS Compliant: Yes
SCHOTTKY RECTIFIER 肖特基整流器
|
IRF[International Rectifier]
InternationalRectifier
Vishay Semiconductors
International Rectifier, Corp.
|
| B25JS60K B25JS60KL B25CS40KL B25CS40DL B25DC60DL B |
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|25A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五（无线资源管理）|5A我（翻译
Metal Oxide Resistor - RS 2 1K 5% W 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.2KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五（无线资源管理）|5A我（翻译
|
Vishay Intertechnology, Inc.
Cornell Dubilier Electronics, Inc.
Allegro MicroSystems, Inc.
Atmel, Corp.
NXP Semiconductors N.V.
|
| FB514 FB612 FB614 FB522 FB524 FB523 |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|25A I(T) 晶闸管模块|桥|半CNTLD |消委会| 1.2KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|42.5A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|800V V(RRM)|25A I(T)
|
Square D by Schneider Electric
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4
TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|300V V(DRM)|25A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB
TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50
FUSE 1A FA SMT 1206
TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五（DRM）的| 300口（T）的有效值|00VAR50
TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五（DRM）的| 150A口（T）的有效值|00AB
TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五（DRM）的| 300口（T）的有效值|培训基金，一辆M23
TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五（DRM）的|0A口（T）的有效值|培训基金- M12
TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五（DRM）的| 150A口（T）的有效值|培训基金- M20
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM8
|
Cornell Dubilier Electronics, Inc.
EPCOS AG
SIEMENS AG
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| FQP5N60C FQPF5N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FCH20N60NBSP FCA20N60NBSP FCH20N60 FCA20N60 |
600V N-Channel SuperFET
600V N-Channel MOSFET
From old datasheet system
|
Fairchild Semiconductor
|
